The PE 2000 RF Plasma Etcher is specifically designed for reactive
gas plasma etching and surface treatments. The unit is capable of
150 watts RF forward power at 13.56 MHz and up to four gas
processing. The system is ideal for R&D applications where single
sample processing is needed and total control of each process
parameter is necessary. Processes such as photoresist strip, BPSG
removal, oxide and nitride layer etch, surface treatment of plastics
and plasma cleaning are typical applications.
Samples up to 6" diameter as well as irregular shaped substrates
can be accommodated in the 200mm diameter vacuum chamber.
A fully manual control system coupled with digital readouts and integral matching network with switching type
power generator offer a wide range of experimental etch parameters.