SBT has a wide variety of technical publications from conferences around the world. These publications relate in some way to SBT products and are available by sending an email request.
| Report # |
Title |
Reference Citation |
Equipment / Technique |
| 1 |
Polishing Methods for Metallic and Ceramic Transmission Electron Microscopy Specimens |
B.J. Kestel, ANL-80-120, Rev. 1, pp.1-66, March 1986 |
Model 550 Metal/Ceramics |
| 2 |
Techniques for Achieving Reproducible Shutoff During Jet Thinning of TEM Specimens |
B.J. Kestel, Materials Science Division Argonne National Laboratory, IL |
Model 550 None |
| 3 |
Improved Retention of Precipitates in Stainless Steels During Jet Thinning for TEM |
B.J. Kestel, Ultramicroscopy, Vol. 19, pp.213-216, 1986 |
Model 550 Stainless Steel |
| 4 |
Improved Electrolytes for Thinning of Vanadium and It's Alloys |
B.J. Kestel, Ultramicroscopy, Vol. 19, pp. 299-302, 1986 |
Model 550 V |
| 5 |
A Jet Electropolishing Solution for Silicon Germanium, Tantalum, Niobium, and Tungsten Rhenium |
B.J. Kestel, Ultramicroscopy, Vol. 9, pp. 379-384, 1982 |
Model 550 SiGe;Ta;Nb;WR |
| 6 |
Non-Acid Electrolyte Thins Many Materials for TEM Without Causing Hydride Formation |
B.J. Kestel, Ultramicroscopy, Vol. 19, pp. 205-212, 1986 |
Model 550 Various Metals |
| 7 |
Fabrication of GaAs Bistable Optical Devices |
J.L. Jewell, H.M. Gibbs, A.C. Gossard, A. Passner and W. Wiegmann, Univ. of Arizona and Bell Laboratories |
Model 550 GaAs |
| 8 |
An Improved Technique for Selective Etching of GaAs and Ga1-xAlxAs |
J.J. Lepore, Journal Applied Physics, Vol. 51, No. 12, Dec. 1980 |
Etching GaAs;GaAlAs |
| 9 |
A Chemical Thinning Technique for TEM Cross Sectional Samples |
R.J. Gaboriaud, California Institute of Tech. |
Model 550 Cross Sections |
| 10 |
Preparation of Iron and Aluminum Samples for Ion Implantation and TEM Examination |
J.M. McDonald, Sandia National Laboratory |
Model 550 Fe;Al |
| 11 |
Chemical Thinning of Silicon for TEM with Model 550D Jet Thinning Instrument |
SBT Applications Lab |
Model 550 Si |
| 12 |
Stereographic X-Ray Reflection Topography of Dislocations in Zinc |
T. Vreeland Jr., W.M. Keck laboratory of Engineering Materials California Inst. Of Tech., Journal of Appl. Crystallography, Vol. 9, part 1, Feb. 1976 |
X-Ray Reflection Zn |
| 13 |
Characterization of the Microstructure, Fracture Morphology, and Toughness in Particulate and Short Fibre Reinforced Aluminum Matrix Composites |
M.R. Krishnadev et al, Laval University |
Model 550 Al |
| 14 |
Jet Thinning of YBa2Cu3Ox High Tc Superconductor and Gold for TEm with a Non-Acid Electrolyte |
B.J. Kestel, Argonne National Laboratory, March 1988, Ultramicroscopy, Vol. 25, pp. 351-354 |
Model 550 Super;Au |
| 15 |
Technique for Jet Thinning Aged Iron-Chromium Alloys for TEM |
B.J. Kestel, Materials Science Division Argonne National Laboratory, IL, pp.1-3 |
Model 550 FeCr |
| 16 |
Technique for Preparation of TEM Foils from Two-Phase Uranium Silicide |
B.J. Kestel, Argonne National Laboratory, Revised Jan. 1988 |
Model 550 USi |
| 17 |
The Formation of Pd8Mo in Proton-Irradiated Pd-Mo Solid Solutions |
M.S. Mostafa and A.J. Ardell, Materials Letters, Vol. 6, No. 3, pp. 67-60, 1987 |
Model 550 PdMo |
| 18 |
Dimpling of Cadmium Telluride Samples for TEM |
Michael E. Lee, E.O. de Neijs and A.M. Letsoalo, Materials Research Society Proc. Symp. Proc., Vol. 115, 1988, pp. 193-198 |
Model 515 CdTe |
| 19 |
Artefacts in Ceramics Produced During Preparation and Examination of TEM Specimens |
W.E. Lee, M.A. McCoy and S.G. Mhaisalkar, Materials Research Society Symp. Proc., Vol. 115, 1988, pp. 199-204 |
Model 515 Ceramics |
| 20 |
TEM Specimen Preparation of Silicon |
Jim Tomei, Univ. of Illinois at Chicago Material Science Laboratory |
Model 515 Si |
| 21 |
Technique for the Preparation of TEM Plan-View and Cross-Section Samples of YBa2Cu3O7 Thin Films on MgO and SrTiO3 |
Stephen Streiffer, Stanford Univ. |
Model 515 MgO;SrTi;YBaCu |
| 23 |
Making Durable Specimens for Electron Microscopy |
Lewis Research Center, Cleveland, OH, NASA Tech Briefs, June 1989, pp. 55-56 |
Model 515 |
| 25 |
The Preparation of Cross-Section Specimens for TEM |
John C. Bravman and Robert Sinclair, Stanford Univ., Department of Materials Science and Engineering |
Model 590 Interfaces |
| 26 |
Electrolyte for Jet-Thinning Martensitic Steel Containing Precipitates |
B.J. Kestel, Argonne National Laboratory, Ultramicroscopy, Vol. 26, pp. 405-408 |
Model 550 Various |
| 27 |
A Microfinishing Technique for Semiconductor Failure Analysis |
B.R. Hammond and R.R. Danyew, Burlington Technical Bulletin, pp. 1-5 |
Polishing Fe,Steel |
| 28 |
Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching |
Kyung-ho Park, Fujitsu Ltd. Kawaski, 211 Japan |
FIB / Model 515 |
| 29 |
From Wafers to Electron Transparency: Specimen Preparation of Semiconductors for TEM |
Paul Spellward, H. H. Wills Physics Lab, Univ. of Bristol |
Model 515 Semiconductor |
| 31 |
Investigation of Ultra Thin Films of YBa2Cu3O7-8 Grown on MgO |
S.K. Streiffer, C. B. Eom, J. C. Bravman and T.H. Geballe, Stanford Univ., pp.6-7, Electron Microscopy, copyright 1990 |
Model 515 Superconductor |
| 32 |
Recent Developments in the Preparation of Semiconductor Device Materials for the TEM |
J.P. Benedict, Ron Anderson, S.J. Klepeis, W.G. Vandygrift, M.S. Orndorff, IBM Corporation, pp. 1-10 |
Model 590 YBaCuO;MgO |
| 33 |
A Procedure for Cross Sectioning Materials for TEM Analysis Without Ion Milling |
Ron Anderson, S. Klepeis, J. Benedict, IBM East Fishkill, " Speciman Preparation for Transmission Electron Micr. Of Materials, Vol. 115, pp. 179 |
Model 590 Semiconductor |
| 34 |
A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis |
J.P. Benedict, Ron Anderson, S.J. Klepeis, and M. Chaker, Mat. Res. Soc. Symp. Proc., Vol. 199, pp. 189- 204 |
Model 590 Semiconductor |
| 35 |
Algorithm for Crystal Alignment with a Two-Axis Goniometer |
Joseph B. Milstein, Rev. Sci. Instrum. 61, Oct. 1990, pp. 2581- 2584 |
Model 250 Semiconductor |
| 36 |
Electropolishing of Polycrystalline and Single Crystal YBa2Cu3O7-8 for TEM Studies |
R. Wheeler, Ultramicroscopy, Vol. 35, pp. 59-64, 1991 |
Model 550 Crystals |
| 37 |
Improved Methods and Novel Techniques for Jet Electropolishing of TEM Foils |
B.J. Kestel, Materials Research society Symp. Proc. Vol. 199 |
Model 550 YBaCuO |
| 38 |
New Life for Unusable Electropolished TEM Foils |
V.L. Smith-Wackerie and C. L. Trybus, Ultramicroscopy, Vol. 40, pp. 187-190, 1992 |
Model 590 Various |
| 39 |
Nontraditional Mounting Media for the Preparation of Advanced Materials |
V.L. Smith- Wackerie and D. V. Miley, IMS Conference Proceedings, 1992 |
Model 515 / Model 360 Various |
| 40 |
Sample Preparation Methods for TEM Analysis of Semiconductor Devices |
L.M. Gignac and A. L. Edel, ISTFA' 91, Nov. 11-15, 1991, pp. 41- 47 |
Model 590 Various |
| 41 |
Microstructure of LaB6 base Thick Film Resistors |
Z.G. Li, P.F. Carcia and P.C. Donohue, J. Mater. Research., Vol. 7, No. 8, Aug. 1992 |
Model 590 Semiconductor |
| 44 |
Polishing with Colloidal Silica |
George F. Vander Voort, pp.3-11 |
Colloidal polishing Si02;N |
| 45 |
Evaluation of Mechanical Properties of TiN Films by Ultralow Load Indentation |
Michael E. O'Hern, Robert H. Parrish and Warren C. Oliver, Thin Solid Films, 181, pp. 357-363, 1989 |
Model 515 Colloidal Si |
| 46 |
Selected Area Polishing for Precision TEM Sample Preparation |
J. B. Liu, B. M. Tracy and R. Gronsky, Microscopy Research and Technique 26: 162-166, 1993 |
Model 590 TiN |
| 47 |
Preparation of Pre-selected Areas of Silicon Wafers for TEM |
A. Bohg, E. Mirbach and L. Schneider, The Institue of Physics, Aug. 1977 |
Various for TEM Semiconductor |
| 48 |
Transmission Electron Microscopy Study of Two-Dimensional Semiconductor Device Junction Delineation by Chemical Etching |
Jingbao Liu, M. Lawrence, A. Dass, and Ronald Gronsky, Department of Materials Science and Mineral Engineering, University of California |
Chemical etching Si |
| 49 |
Recent Developments in the Use of the Tripod Polisher for TEM Specimen Preparation |
John Benedict, Ron Anderson and Stanley J. Klepeis, Materials Research Society, Vol. 254, 1992 |
Model 590 Semiconductor |
| 50 |
In Situ Hydride Formation in Zirconium and Titanium During Ion Beam Milling |
Graham J.C. Carpenter, Jennifer A. Jackman, John P. McCaffrey, and Reza Alani, Microscopy Society of America, Vol. 1, No. 4:pp. 175-184, 1995 |
Ion Milling Semiconductor |
| 51 |
Preparation of Germanium TEM Specimens by Jet Electropolishing |
Bernard J. Kestel, Microscopy Society of America, Vol. 1, No. 3, pp. 137-142, 1995 |
Model 550 Ti;Zr |
| 52 |
Sample Preparation of Thin Polymeric Films for TEM |
M.L. Porta, J.D. Rancourt, and L.T. Taylor, American Laboratory,pp. 91-93 |
Sample preparation Ge |
| |
|
|
|
| 62 |
Seeing Atoms |
James Trefil, Discover, pp. 55-60 |
STM / AFM |
| |
|
|
|
| 64 |
A Technique for Producing Precise Large Area XTEM Samples of VLSI Devices |
Wayne S. Berry, IBM General Technology Division,pp. 1-4 |
Cross sectioning |
| 65 |
Investigation of Multilayer Metallisation in a Gate Array Device Using Cross Sectional TEM |
S.F. Gong, H.T.G. Hentzell PhD, A. Robertson, G. Radnoczi PhD, Iee Proceedings, Vol. 137, No.1, 1990,pp.53-56 |
Cross sectioning VLSl Circuts |
| 67 |
Properties of Diamond Lapping Films |
N. Kawashima, T. Hattori, K. Orii, S. Tochihara, Lapping Films, pp. 244-247 |
Diamond lapping film |
| 69 |
Preparation of Large Thin Area VLSI TEM Specimens by Dimpling with a Flatting Tool |
Helen L. Humiston, Bryan M. tracy, M. Lawerence A. Dass, Intel Corporation |
Model 515 C (Buckyballs) |
| 78 |
Rapid Plan View TEM Sample Preparation for Semiconductor Grain Size Analysis |
M.W. Cole and E.S. Zakar, Journal of Electron Microscopy Technique, Vol. 19, pp. 128-129 |
Plan view |
| 79 |
Preparation of (InGa)As/GaAs Multilayered Materials for TEM by One Side Non-Rotation Ion Beam Thinning |
J.Y. Yao and G.L. Dunlop, Journal of Electron Microscopy Technique, Vol. 19, pp. 90-98 |
Ion milling Semiconductors |
| 80 |
Preparation of Ultra Thin Oxide Windows on Titanium for TEM Analysis |
G. Radegran, J. Lausmaa, L. Mattsson, U. Rolander, and B. Kasemo, Journal of Electron Microscopy Technique, Vol. 19, pp. 99-106 |
Sample preparation InGaAs |
| 81 |
The Metallography of Stainless Steels |
George F. Vander Voort, Applied Metallography, pp.6-12 |
Metallography Ti02 |
| 87 |
Specimen Preparation of Thin Crystalline Fibers for TEM |
Rosemarie Koch and Ann F. Marshall, Mat. Res. Soc. Symp. Proc., Vol. 199, pp.145-152, 1990 |
Sample preparation |
| 91 |
Super Scopes |
Arthur Fisher, Popular Science, pp. 64-70 |
Microscopy Optical Coating |
| 94 |
Thin Films Get Thinner as Research Heats Up |
Tim Studt, R&D Magazine, pp. 70,71,74,80, March 1990 |
None |
| 95 |
Diamond Films: Hard Materials to Beat |
Alan B. Haker, R&D Magazine, pp. 84-91, March 1990 |
None Thin Films |
| 96 |
Planarization Using RIE and Chemical Mechanical Polish |
Victor Comello, Semiconductor International, pp. 28, March 1990 |
Chem-mechanical polishing Diamond Coating |
| 98 |
Grinding and Lapping: A Basic Guideline |
|
Grinding and Lapping |
|
| 99 |
A Technique for the Preparation of Thin Film Cross Sections for TEM |
M. Liberia, T.A. Nguyen, and C. Hwang, Stevens Institute of Technology |
Cross sectioning None |
|
| 102 |
Crystallographic Phase Identification in the SEM: BSE Kikuchi Patterns |
J.R. Michael and R.P. Goehner, Microscopy Society of America, Vol.23, No.2:pp. 168-175 |
BSE diffraction Pd2Si |
|
| 107 |
Microtomy: Convenient Method for Preparing XTEM Ceramic Samples |
Yves Maniette, Journal of Materials Science Letters, pp.48-50 |
Ultramicrotomy Particles |
|
| 108 |
Preparation of Mulitlayer Optical Coatings for XTEM by Ultramicrotomy |
P. Swab and R.E. Klinger, Optical Coating Laboratory |
Ultramicrotomy SiC Fibers |
|
| 109 |
Techniques for Study of Electrocrystallization In Situ Using TEM |
K.J. Hanson, J.M. Gibson, M.L. McDonald, Mat. Res. Soc. Symp. Proc., Vol. 115, 1998 |
In situ TEM Diamond |
|
| 110 |
Preparation of Electropolished Transverse Aluminum Sections for TEM |
Steve Smith, Mat. Res. Soc. Symp. Proc., Vol.115:pp. 223-228,1998 |
Jet polishing Ag on Au |
|
| 111 |
Techniques in Preparing TEM Specimens of Diamond Thin Films |
W.A. Chiou, M.S. Wong, F.R. Chen, D.X. Li, R.P.H. Chang, and M. Meshii, electron Microscopy Society of Amer.:pp. 716-717 |
Sample preparation Al |
|
| 112 |
Preparation of In Situ Cu-Nb Composite Sheet and Wire for TEM |
C.L. Trybus, F.C. Laabs, A.R. Pelton, and W.A. Spitzig, Mat. Res. Soc. Symp. Proc., Vol.115:pp.235-240 |
In situ TEM Diamond |
|
| 113 |
TEM Observation of Mechanically Thinned SiC |
H.K. Plummer Jr. and S.S. Shinozaki, Elec. Micr. Soc. of Amer., pp.178-179,232-233 |
Plan view polishing Cu-Nb |
|
| 114 |
Two Methods for Aligning a Mechanical Dimpling Device for TEM Sample Preparation |
S.A. Bradleyt, ,J.F. Reddy, and Wayne E. King, Jour. of Elec. Micr. Tech. 6:pp.303-304 |
Dimpling SiC |
|
| 115 |
Automated Jet Polishing of TEM Specimens for In Situ Straining |
B. Hardiman, W.A.T. Clark, and R.H. Wagoner, Jour. of Elec. Micr. Tech. 5: pp.199-202 |
Jet polishing None |
|
| 116 |
TEM Specimen Preparation by Mechanical Microthinning |
H.K. Plummer, Jr., and S. Shinozaki, Research Staff, Ford Motor Company |
Mechanical polishing Al;Brass |
|
| 117 |
Artefacts in Ceramics Produced During Preparation and Examination of TEM Specimens |
W.E. Lee, M.A. McCoy and S.G. Mhaisalkar, Department of Ceramic Engineering |
Sample preparation SiC;Al;Ceramic |
|
| 118 |
Preparation of Mechanically Alloyed Powders for TEM Examination |
E.A. Kamenetzky, M. Wall, R. Castro, and L.E. Tanner, Chemistry and Materials Science Dept. |
Sample preparation Ceramics |
|
| 119 |
Dimpling of Cadmium Telluride Samples for TEM |
Michael E. Lee, E.O. de Neijis and A.M. Letsoalo, Mat. Res. Soc. Symp. Proc. Vol.115, pp.193-204 |
Dimpling Ni;Nb powders |
|
| 120 |
Cross Sectional TEM Preparation of Magneto-Optical Disk by Ultramicrotomy |
G.W. Bailey and C.L. Rieder, Microscopy Society of America, pp.236-237 |
Ultramicrotomy CdTe |
| 121 |
Simple Plan View Specimen Preparation for TEM Investigation of Semiconductors and Metals |
A. De veirman, J. Eysermans, H. Bender, J. Vanhellemont and J. Van Landuyt, Materials Research Society |
Plan view TbFeCoSiN |
| 122 |
A Controlled Method for Preparing Plan View Si Samples for TEM Study |
Myrtle B. Ellington, Mat. Res. Soc. Symp. Proc. Vol. 115, 1998, pp. 265-270 |
Plan view GaAs;A1203 |
| 123 |
A Variation of TEM Sample Preparation for VLSI Analysis |
Michael Madden and Penny Crafard, Journal of Electron Micr. Tech., 11:pp. 161-166 |
Cross sectioning Si |
| 124 |
How to Build Two Sample Multilayered Cross Sections |
Dr. Hun-Lian Tsai and Lorraine Palmer, Materials Science Lab:pp. 1-4 |
Cross sectioning Si |
| 125 |
A Technique for Preparing TEM Cross Sections to Specific Area Using the FIB |
S. Morris, S. Tatti, E. Black, N. Dickson, H. Mendez, B. Schwlesow, and R. Pyle, The Inter. Sym. For Testing & Failure Anal., pp. 417-427 |
FIB Si |
| 126 |
Cross Sectional TEM Sample Preparation for Multilayer Electronic Materials |
Peng-Heng Chang, M.D. Coviello and A.F. Scott, Mat. Sci. Lab |
Cross sectioning Si |
| 127 |
Rapid Preparation Technique for XTEM Investigation of Semiconductors and Metals |
J. Vanhellemont, H. Bender and l. Rossou, Inter. Micro-Elect. Center, pp. 1-6 |
Cross sectioning Si |
| 128 |
Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation |
D. Bahnck, J.L. Batstone, and Julia M. Phillips, AT&T Bell Laboratories |
Sample preparation Si;Si/Quartz |
| 129 |
Cross Section Preparation of Film/Substrate Combinations with Large Sputtering Yield Differences |
ULF Helmersson and jan-Eric Sundgren, Jour. Of Elec. Micr. Tech.,4:pp. 361-369 |
Ion milling CaF2/Si/A1203 |
| 130 |
Preparation of Cross Sections of Si Specimens for TEM |
A. Garulli, A. Armigliato, M. Vanzi, J. Microsc. Spectrosc. Electron., Vol. 10, No.2, 135-144 |
Cross sectioning TiN;W;Mo6C |
| 131 |
Sample Preparation Methods for TEM Analysis of Semiconductor Devices |
L.M. Gignac and A. L. Edel, ISTFA' 91, Nov. 11-15, 1991, pp. 41- 47 |
Sample preparation Si |
| 132 |
Specimen Preparation for TEM of Materials-III |
Ron Anderson, Bryan Tracy, John Bravman, Materials Research Society, Vol. 254 |
Sample preparation Si;PtSi |
| 133 |
Surface and Interfacial Studies of Sintered YBaCO Superconductors by Auger Electron Spectroscopy |
E.W. Seibt and A. Zalar, Materials Letters, Vol.7,pp:256-260 |
Auger Si |
| 134 |
Characterization of Interfaces in Metal Matrix Composites |
L.F. Allard, S.P. Rawal and M.S. Misra, Journal of Metals, Vol.38, pp:40-42 |
Interfaces YaBaCO |
| 135 |
Microstructural Characterization of Interfaces in Diffusion Bonded Cast Gr/Mg Composites |
Suraj P. Rawal, Lawerence F. Allard, and Mohan S. Misra, |
Interfaces SiC;C/Al |
| 136 |
Ion Thinning Apparatus for Preparation of TEM Specimens Using New Type Ion Guns |
Kentaroh Yoshida and Takashi Yamada, Rev. Sci. Instrum. 55, pp:551-558 |
Ion milling Gr/Mg composite |
| 137 |
A Saddle Field Ion Source of Spherical Configuration for Etching and Thinning Applications |
J. Franks and A. M. Ghander, Vacuum, Vol.24, Num.10,pp:489-491 |
Ion milling Minerals |
| 138 |
Optimization of Thinning Rates in an Argon Ion Beam Thinner |
Geoffrey M. McCredie, Mathew R. Phillips, and Anthony R. Moon, Rev.Sci.Instrum. 62,pp:1855-1856,167-169 |
Ion milling None |
| 139 |
Plasma Neutral Beam Etching Apparatus |
George C. Marshall, NASA Tech Briefs MFS-26068, Tech. Utilization Office |
Ion milling None |
| 140 |
Formation and Elimination of Surface Ion Milling Defects in CdTe, ZnS, and ZnSe |
A.G. Cullis, N.G. Chew, and J.L. Hutchison, Dept. of Metallurgy and Science of Mat., pp:1-13 |
Ion milling None |
| 141 |
Iodine Ion Milling of Indium Containing Compound Semiconductors |
N.G. Chew and A.G. Cullis, |
Ion milling CdTe;ZnS;ZnSe |
| 142 |
Preparation of TEM Specimens from Compound Semiconductors by Ion Milling |
N.G. Chew and A.G. Cullis, Ultramicroscopy 23, pp:175-198 |
Ion milling InP;InSb;CdTe |
| 143 |
Ion Beam Induced Roughness and Effects in AES Depth Profiling of Multilayer Ni/Cr Thin Films |
A. Barna, P.B. Barna and A. Zalar, surface and Interface Analysis, Vol.12, pp:144-150(1988) |
Ion milling InP;InSb;CdTe |
| 144 |
Study of Ion Mixing During Auger Depth Profiling of Ge-Si Multilayers |
M. Menyhard, A. Barna, J.P. Biersack, J. Vac. Sci. Technol., pp:2368-2372 |
Auger NiCr thin films |
| 145 |
Possibility of Surface Polishing by Ion Beam Thinning |
A. Barna, Yearbook'87 of the Research Institute for Tech. Physics, Budapest |
Ion milling Ge-Si multilyr. |
| 146 |
Topographic Kinetics and the Practice of Low Angle Ion Beam Thinning |
Arpad Barna, Mat.Res. Soc. Symp. Proc. Vol. 254, pp: 3-22 |
Ion milling Si |
| 147 |
Model Considerations of Ion Beam Thinning for Preparing TEM Samples |
A. Barna and P.B. Barna, Res. Inst. For Tech. Physics, pp:247-248 |
Ion milling Si |
| 148 |
Analysis of the Development of Large Surface Topography During Ion Etching |
A. Barna, P.B. Barna and A. Zalar, Vacuum, Vol.40, pp:115-120 |
Ion milling None |
| 149 |
New Type of Ion Milling Equipment for Sample Preparation |
A. Barna, Eurem, 1984, Budapest, Vol.1, pp:107-108 |
Ion milling Ti;Cu;Al;Si |
| 150 |
Precision Ion Milling of Layered, Multielement Specimens with high Specimen Preparation Spatial Resolution |
Ron Anderson and John Benedict, IBM |
Ion milling None |
| 151 |
Comparative Study of Ion Milling Techniques in Cross Sectional TEM Specimen Preparation |
E.M. Zielinski and Bryan Tracy, Mic. Res. and Tech., Vol.22, pp: 199-206 |
Ion milling Si |
| 152 |
Comparison of Ion Beam Sputtered Chromium and Iridium Films for EM Applications |
G.F. Cardinale, V.L. Carlino, D.G. Howitt, Scanning, Vol.15, pp:25-30 |
Ion milling Si;Ti;Si02 |
| 153 |
Effects of Type and Size of Diamond Abrasives on Material Removal Rates in Metallographic Polishing |
L.E. Samuels and B. Wallace, Metallography, Vol.17, pp:19-41(1984) |
Metallography Cr;lr |
| |
|
|
|
| 157 |
On the Recrystallization of Electrodeposited Zn During Mechanical Polishing to Electron Transparency |
L.A. Giannuzzi, P.R. Howell, H.W. Pickering and W.R. Bitler, Elec. Mic. Soc. Of Amer., 1991 |
Metallography Various |
| 158 |
Metallography of Stainless Steels |
George F. Vander Voort, Journal of Metals, Vol.41, No.3, 1989, pp:6-11 |
Metallography Zn |
| 159 |
Mounting, Lapping, and Polishing Large Sizes and Quantities of Metallographic Specimens |
N.J. Gendron, American Society for Metals |
Metallography Stainless steel |
| 160 |
Metallographic Specimen Preparation of Ferrous Metals: An Introduction |
James Nelson, Heat treating, 1988,pp:22-25 |
Metallography Various |
| 161 |
Polishing of Diamond Films |
B. Bhushan, V.V. Subramaniam and B.K. Gupta, Diamond Films and Tech., Vol.4, No.2, 1994, pp:71-97 |
Metallography Various |
| 163 |
Fiber Reinforced Ceramic Matrix Composites: A Sample Preparation Challenge |
Stephanie Chanat, Vol.73, No.4, 1994, pp:73-77 |
Metallography Diamond |
| 164 |
Tribology of Amorphic Diamond on Stainless Steel |
C.B. Collins, F. Davanloo, J.H. You and H. Park, Diamond Films and Tech., Vol.4, No.1, 1994, pp:15-21 |
Metallography Composites |
| |
|
|
|
| 171 |
In Situ X Ray Diffraction Study of Supersaturated Ni 12.5% Alloy |
S. Polat, M.A. Dvorack and Hayden Chen, Acta Metall, Vol.33, No.12, pp:2175-2183 |
X-ray diffraction SiC;Diamond; TiN |
| 172 |
Application of the Ionless Tripod Polisher to the Preparation of YBCO Superconducting Multilayer and Bulk Ceramic Thin Films |
J. Ayache and P.H. Albarede, Ultramicroscopy 60, pp:195-206 |
Model 590 Ni 12.5%Si |
| 173 |
Chemical-Mechanical Polishing: Process Manufacturability |
Rahul Jairath, Janos Farkas, C.K. Huang, Matt Shell and Sing-Mo Tzeng, Solid State Tech., 1994,pp:71-74 |
Chem-mechanical polishing YBCO |
| 176 |
Improved Sample Preparation for Cross-Sectional TEM of Layered Structures using Rocking-Angle Ion Milling Techniques |
Jeong Soo Lee, Young Woo Jeong and Sung Tae Kim, Micr. Res. And Tech, Vol.33, pp:490-495, 1996 |
Ion milling MEMS |
| 177 |
TEM Sample Preparation: Cutting a Selected Area to Size and Grid Mounting for FIB |
John F. Walker, FEI Europe Ltd. |
FIB Pt/Ti/TiN/Si02/Si |
| 179 |
Ultramicrotomy for Materials Science |
T.F. Malis and D. Steele, Ultramicroscopy for Mat. Sci., Vol.199, pp:1-29 |
Ultramicrotomy Si |
| 180 |
Cross Sectioning Materials for TEM Analysis using the Tripod Polisher |
J.P. Benedict, R.M. Anderson, S.J. Klepeis, Microstructural Science, Vol.23, pp:277-284 |
Model 590 Various |
| 181 |
Small Angle Cleavage of Semiconductors for TEM |
J.P. McCaffrey, Ultramicroscopy 38, 1991, pp:149-157 |
Model 520 Si |
| 182 |
TEM Samples of Semiconductors Prepared by a Small Angle Cleavage Technique |
J.P. McCaffrey, Mat. Res. Soc. Symp. Proc., Vol.254, 1992, pp:109-120 |
Model 520 lll-V; ll-Vl materials |
| 184 |
High Resolution Electron Microscopy on Superconducting YBa2Cu3O7 Thin Films |
C. Tracholt, J.G. Wen, V. Svetchnikov, A. Delsing and H.W. Zandbergen, Thin Solid Films, 228, 1993, pp:178-181 |
Model 590 Semiconductors |
| 185 |
Ultramicrotomy of Diamond Films for TEM Cross Section Analysis |
P. Swab, Micr. Res. And Tech., Vol.31, 1995, pp:308-310 |
Ultramicrotomy YBa2Cu307 |
| 186 |
Preparation of Specimens for use in Fabricating Bicrystals by UHV Diffusion Bonding |
W.L. Wlen, G.H. Campbell, W.E. King, Microstructural Science, Vol.23, pp:215-219 |
Model 170; 150 Diamond |
| 187 |
Plasma Treatment for Improved Wire Bonding |
Michael K. Cinibulk, John R. Welch, and Randall S. Hay, J. Am. Ceram. Soc., Vol.79, 1996, pp:2481-84 |
PC 150 Cu |
| 188 |
Preparation of Thin Sections of Coated Fibers for Characterization by TEM |
Fazal Fazlin, Solis State Technology, 1996, pp:117-120 |
Model 590 Various |
| 189 |
Auger Depth Profile Analysis of Deeply Buried Interfaces |
A. Barna and M. Menyhard, Phys. Stat. Sol., Vol.145, pp:263-273 |
Auger fibers |
| 190 |
Study of Low Energy Atomic Mixing by Means of Auger, XTEM, and TRIM Simulation on Ge/Si Multilayer Systems |
A. Barna and M. Menyhard, Surface and Interface Analysis, Vol.24, pp:476-480, 1996 |
Auger Various |
| 191 |
Preparation of Cross Sectional TEM Samples for Low Angle Ion Milling |
J.P. McCaffrey and A. Barna, Mic. Res. And Tech., Vol. 36, pp:362-367,1997 |
Mechanical polishing Ge-Si multilyr. |
| 192 |
Reactive Ion Milling of InP Based Samples |
Barna A and Pecz B, Res. Inst. For Tech. Physics |
IV3 Si; Various |
| 193 |
Applications of Reactive Gas Plasma Cleaning Technology in Minimizing Contamination of Specimens During TEM and AEM |
S.P. Roberts, N.J. Zaluzec, S.D. Walck, J.T. Grant, Mat. Res. Soc. Symp. Proc., Vol.480, 1997, pp:127-136 |
PC 150 InP |
| 194 |
TEM Cross Section Preparation with Minimal Ion Milling Time |
C.P. Scott, A.J. Craven, P. Hatto and C. Davies, Journal of Microscopy, Vol.182, 1996, pp:186-191 |
Dimpling / Ion Milling Stainless steel |
| 197 |
A Convenient Method for Removing Surface Oxides from Tungsten STM Tips |
Lisa A. Hockett and Stephen E. Creager, Rev. Sci. Instrum., Vol.64, 1993, pp:263-264 |
Chemical etching Diamond |
| 198 |
Tip Sharpening by Normal and Reverse Chemical Etching |
Mircea Fotino, Rev. Sci. Instrum., Vol.64, 1993, pp:159-167 |
Chemical etching W |
| 199 |
Diamond Compounds for Polishing Metallographic Specimens |
R.D. Buchheit and J.L. McCall, Battelle-Columbus Laboratories, pp:77- 93 |
Polishing W |
| 203 |
Advanced Preparation of Hard Materials for Cross-Sectional TEM Analysis |
Kim Ostreicher and Changmo Sung, Materials Characterization Dept. |
Dimpling; ion milling SiC;SiGe alloy |
| 204 |
A Novel Method for the Cross-Sectional TEM Preparation of Thin Films Deposited onto Water Soluble Substrates |
Gyorgy Safran and Pierre Panine, Micr. Res. And Tech., Vol.25, pp:346-349, 1993 |
Polishing ZnAlCu alloy |
| 205 |
Reduced Amorphization of Ion Milled Silicon Cross Section TEM Samples by Dynamic Annealing During Milling |
D. Bahnck and R. Hull, AT&T Bell Laboratories |
Ion milling NaCl |
| 207 |
Peroxide Polishing of Semiconductor Wafers to Sub-nm Finish |
Elsevier Science Ltd.,Vol.7, No.2, pp:20-24 |
Chemical polishing Abrasives |
| 209 |
Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal |
American Society for Testing and Materials, pp:1-5 |
Crystal orientation Si |
| 210 |
TEM Calibration Sample for All Magnification, Camera Constant, and Image-Diffraction Pattern Rotation Calibrations |
J. McCaffrey and J.M. Baribeau, Micros. Res. And Tech., Vol.32, pp:449-454,1995 |
TEM calibration semiconductors |
| 211 |
Tips on Finding a Good Etchant for Metals |
Bernard Kestel, Argonne National Lab, pp:6 |
Electropolishing Si/SiGe |
| 212 |
Investigation of Multilevel Metallization ULSI by Light Emission from the Back-Side and Front-Side of the Chip |
K. Naitoh, T. Ishii, J.-1. Mitsuhashi, Symposium for Testing and Failure Analysis, 1997, pp:145-151 |
Backside emission Metals |
| 214 |
Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices |
S.-S.Lee, J.-S. Seo, N.-S. Cho, S. Daniel, Symposium for Testing and failure Analysis,1997,pp:63-66 |
Backside emission Semiconductors |
| 215 |
Fast Grinding to Optical Transparency on the Second Side |
Scott Walck, Mic. Res. And Tech., Vol. 26, pp:162,1993 |
Tripod polishing Semiconductors |
| 216 |
Influence of the Growth Mechanism on the Grain Boundary Structure in YBa2Cu3O7 Thin Film Bicrystals |
J. Ayache, A. Thorel, J. Le Duigou, J. Bonevich, U. Dahmen, Journal of Alloys and Compounds,pp:2774-2778,1996 |
Tripod polishing Semiconductors |
| 217 |
Ion Energy Effect on Surface Amorphisation of Semiconductor Crystals |
A. Barna, L. Toth, B. Pecz, G. Radnoczi, |
Ion milling YRa2Cu307 |
| 218 |
Low Angle and Low Energy Ion Beam Etching for TEM Sample Preparation |
A. Barna, Research Institute for Technical Papers,pp:1-4 |
Ion milling Semiconductors |
| 219 |
Amorphisation and Surface Morphology Development at Low Energy Ion Milling |
A. Barna, B. Pecz, M. Menyhard, Ultramicroscopy,pp:1-11,1997 |
Ion milling Semiconductors |
| 220 |
Investigation on the High Speed Ion Beam Thinning of LiNbO3 Single Crystals |
L. Malicsko, A. Barna, R. Scholz |
Ion milling Semiconductors |
|
| 222 |
TEM of Tungsten Interfacial Metallurgy in ULSI Semiconductor Applications |
IBM |
Sample preparation Diamond |
|
| 223 |
Transmission Electron Microscopy (TEM) Specimen Prep Technique using focused Ion Beam (FIB): App to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (Wsi) |
K. Doong, J.-M. Fu, Y.-C. Huang, 23rd Inter. Symposium for Testing and Failure Analysis,pp:237-242 |
FIB W,Si |
|
| 224 |
Transmission Electron Microscopy Specimen Prep of Ceramic Coatings on ceramic Fibers |
M.K. Cinibulk, J.R. Welch, R.S. Hay, Mat. Res. Soc. Symp. Proc., Vol.480,1997,pp:3-17 |
Tripod polishing Tungstem |
|
| 225 |
Surface Science Aspects of Contamination in TEM Sample Prep |
John T. Grant, Scott D. Walck, Frank J. Scheltens, Andrey A. Voevodin, Mat.Res.Soc.Symp.Proc., Vol.480,1997,pp:49-71 |
Plasma Cleaning SiC |
|
| 226 |
The Small Angle Cleavage Technique: An Update |
Scott D. Walck, John P. McCaffrey, Mat.Res.Soc.Symp.Proc., Vol.480,1997,pp:149-170 |
Small angle cleavage technique Si,Ni,.Ti |
|
| 227 |
Combined Tripod Polishing and FIB Method for Preparing Seminconductor Plan View Specimens |
Ron Anderson and Stanley J. Klepis, Mat.Res.Soc.symp.Proc.,Vol.480,1997,pp:187-192 |
Model 590/ FIB Semiconductors |
|
| 228 |
A New Tripod Polisher Method for preparing TEM Specimens of Particles and Fibers |
Ron Anderson and Stanley J. Klepis, Mat.Res.Soc.Symp.Proc.,Vol.480,1997,pp:193-199 |
Model 590 Semiconductors |
|
| 229 |
The Effects of Gas Composition on the Ion Milling of Cross Sectional TEM Samples containing Carbon Layers |
Scott D. Walck, Frank J. Scheltens, Josekutty J. Nainaparampil, Wright Laboratory |
Ion milling Particles/Fibers |
|
| 230 |
Transmitted Color and Interference Fringes for TEM Sample Preparation of Silicon |
J.P. McCaffrey, J. Hulse, Micron,Vol.29,No.2/3,pp:139-144,1998 |
Ion milling DLC |
|
| 231 |
TEM Characterization of GaN Grown on Sapphire |
B. Pecz, MA di Forte-Poisson, L. Toth, G. Radnoczi, Research Institute for Technical Papers |
Ion milling Si |
|
| 232 |
Strucutral Characterisation of GaN Layers on Sapphire Grown by MOCVD |
B. Pecz, M.A. di Forte-Poisson, L. Toth, G. Radnoczi, Research Institute for Technical Papers |
Ion milling GaN;Sapphire |
|
| 233 |
Cross Section Sample Preparation of a Free Standing Thin Film Coupon for TEM Analysis |
John M. Phelps, Microscopy and Microanalysis,pp:128-132 |
Tripod polishing GaN;Sapphire |
|
| 236 |
TEM Sample Preparation by Ion Milling / Amorphization |
A. Barna, B. Pecz, M. Menyhard, Research Institute for Technical papers |
Ion milling MEMS |
|
| 237 |
Beam Broadening Effects in STEM/EDS Measurement of Radiation Induced Segregation in High Purity 304L Stainless Steel |
J.T. Busby, T.R. Allen, E.A. Kenik, N.J. Zaluzec, G.S. Was, Induced Segregation in High-Purity,pp:1-8 |
PC 150 Various |
|
| 238 |
Plasma Etching a Ceramic Composite |
David R. Hull, Todd A. Leonhardt, William A. Sanders, Metallographic Society,pp:1-9 |
PC 150 Stainless steel |
|
| 239 |
Advanced Techniques for Evaluating Microstructural Characteristics of Ceramic Matrix Composites |
David R. Hull, HiTemp Review,1991,pp:70-1 - 70-12 |
PC 150 SiC,SiN |
| 243 |
Reactive Ion Etch Recipes for Failure Analysis |
David S. Kiefer, Motorola Inc.,pp:55-60 |
PC 150 VLSI circuts (Si) |
| 244 |
Plasma Decapsulation Techniques |
Dean Thomasi, IBM Corporation,pp:1-8 |
PC 150 VLSI circuts (Si) |
| 245 |
Fast, Clean and Low Damage Deprocessing using Inductively Coupled and RIE Plasma |
W.E. Vanderline, C.J. Von Benken, C.M. Davin, A.R. Crockett, 22nd Testing and Failure Analysis,pp:73-76 |
Plasma Cleaning VLSI circuts (Si) |
| 246 |
Plasma / Reactive Ion Etch Techniques |
D. Tomasi, pp:299-302 |
Plasma Etching VLSI circuts (Si) |
| 247 |
Plasma Delayering of Integrated Circuits |
A. Crockett, W. Vanderlin, pp:289-298 |
Plasma Etching Various |
| 248 |
Functional Failure Analysis Technology from Backside of FLSI Chip |
T. Ishii, K. Miyamoto, K. Naitoh, K. Azamawari, 20th Symposium for Testing and Failure Analysis,1994,pp:41-47 |
Backside emission VLSI circuts (Si) |
| 250 |
New Cross Sectioning Techniques using the RIE |
J. Colvin, 17th Symposium for testing and Failure Analysis, 1991,pp:69-75 |
RIE VLSI circuts (Si) |
| 251 |
XTEM and Electrical Analysis of Unstable 0.8 micron LDD MOSFETs Fabricated with Disposable Polysilicon Spacers |
H.L. Hegedus, J.W. Miller, V. Kaushik, 20th Symposium for Testing and Failure Analysis,1994,pp:127-134 |
Polishing, Ion milling VLSI circuts (Si) |
| 252 |
RIE for Failure Analysis |
Gerald Matusiewicz, pp:21-25 |
RIE VLSI circuts (Si) |
| 253 |
IN Situ Transoformation of Zinc TEM Lift Out Specimen |
B.I. Prenitzer, S. Collins, L.A. Giannuzzi, Microscopy and Microanalysis,1999 |
PC 2000 VLSI circuts (Si) |
| 254 |
A Study of Effects of Backside Thinning on Integrated Circuits using a Precision Diamond Wheel Apparatus |
S.P. Roberts, J.M. Patterson, 24th Symposium for Testing and Failure Analysis,1998 |
575 Zn |
| 255 |
Plasma Trimming for TEM Semiconductor Devices |
SBT |
PC 2000 Si |
| 257 |
Cross Sectional TEM Sample Preparation using Focus Ion beam Machine and Wedge Technique |
Du Li, Rose Zhou and Rob Zanoya, Micron Technology, Inc.,pp:894-895 |
FIB, 590 Various |
| 260 |
A New Specimen Preparation Method for Cross Section TEM Using Diamond Powders |
Masahiro Kawasaki, Tadanori Yoshioka, Makoto Shiojiri, Journal of Electron Microscopy, Vol.48,pp:131-137,1999 |
Ion Milling GaN |
| 261 |
A Beginner's Guide to Electron Energy Loss Spectroscopy: Parts 1-3 |
Nestor J. Zaluzec, Electron Microscopy Center for Materials Research,pp:72-83 |
EELS SiC,Si |
| 262 |
Sample Preparation for Backside Failure Analysis using the Infrared Photoemission Microscope |
Alastair Trigg and Loh Peak Yong, 25th Symposium for Testing & Failure Analysis,1999,pp:117-124 |
575 Various |
| 263 |
Cross Sectioning Printed Circuit Boards |
James A. Nelson, Circuit Technology |
Model 650, 920, 150 Si |
| 264 |
Basic Transmission Electron Microscopy and Crystallography |
M. Ruhle, Transmission Electron Microscopy, Ch.11,pp:714-762,1983 |
TEM PCB,Si |
| 265 |
Characterization of air-annealed, pulsed laser deposited ZnO-WS2 solid film Lubricants by TEM |
S.D. Walck, J.S. Zabinski, N.T. McDevitt, J.E. Bultman, Thin Solid Films, 1997 |
590 Various |
| 267 |
Chip and Device Sectioning Techniques |
Microelectronic Failure Analysis,pp:98-110 |
590 Diamond |
| 268 |
Metallurgical Cross Sectioning of Microelectronic Packages for Optical and Electron Beam Inspection |
R.J. Burgoyne, Microstructural Science,Vol.23,pp:79-88 |
none Si |
| 269 |
Mounting of Specimens / Metallographic Grinding, Abrasion, and Polishing |
L.E. Samuels |
Grinidng and polishing Microelectronics |
| 271 |
Trends in Specimen Preparation |
George F. Vander Voort, Advanced Materials & Processes,(2000),pp:45-49 |
Metallography Various |
| 276 |
Preparation of Damage Free Glass TEM Specimens |
Bernard J. Kestel, Ultramicroscopy, Vol.83, pp:61-66,(2000). |
Model 550C Si packages |
| 277 |
Calibrating a Leak Detector Easily and Accurately |
Jean-Pierre De Luca, R&D Magazine,2000,pp:95 |
He Leak Detection Glass |
| 278 |
Cross-sectional Specimen Preparation and Observation of a Plasma Sprayed Coating using a Focused Ion Beam / Transmission Electron Microscopy System |
Toshie Yaguchi, Takeo Kamino, Mitsumasa Sasaki, Gerard Barbezat and Ryoichi Urao, Microsc. Microanal., Vol.6, pp:218-223,2000 |
FIB/TEM He Leak Detection |
| 279 |
New Technique for Successful Thermal Barrier Coating Specimen Preparation for TEM |
M.R. Brickey and J.L. Lee, Microsc. Microanal., Vol.6,pp:231-236,2000 |
650, 590 Ceramics |
| 280 |
Transmission Electron Microscope Specimen Preparation of Metal Matrix Composites Using the FIB |
Julie M. Cairney, Robert D. Smith and Paul R. Munroe, Microsc. Microanal., Vol.6,pp:452-462,2000 |
FIB Pt/Ni/AI/YPSZ |
| 286 |
Choosing the Appropriate Cut-Off Wheel |
Sharon R. Lewis, R&D Magazine, 2000, pp:101 |
650, 660 Metals |
| 287 |
Tailoring Polymer Properties with Ion Beams |
Nathan Capps, Dan Carter, Greg Roche, Semiconductor International, pp:251-258,2000 |
IBS/E Various |
| 288 |
Diagnosing Latch-up with Backside Emission Microscopy |
Thomas Kessler, Friedrich-Wihelm Wulfert and Thomas Adams, Semiconductor Int'l, pp:313-316, July 2000 |
575 Polymers |
| 291 |
Coated-Steel Specimen Preparation |
Ana Albu-Yaron, Y.M. Aravot and A. Pasternak, Advanced Materials & Processes, pp:57-59, July 2000 |
920 Various |
| 296 |
Plasma Surface Modification for Cleaning and Adhesion |
Ron Nickerson, Vacuum technology & Coating, pp:55-62, June 2000 |
RIE 2000 Optics |
| 297 |
TelePresence Microscopy Building R&D Collaboration Technologies |
Tim Studt, R&D Magazine, pp:99-102, April 2000 |
Microscopy Various |
| 300 |
Plasma Cleaning |
Donald M. Mattox, Vacuum Technology & Coating, pp:14-16, August 2000 |
PC 2000, PE 2000 Vacuum |
| 301 |
Field Emission Guns Focus on Solid Targets |
Ian Jones, Vacuum Solutions, pp:35-38. July/August 2000 |
Microscopy Vacuum |
| 302 |
Artefacts in Iodine Ion Milling of Some Compound Semiconductors |
A.C. Wright, Ultramicroscopy, Vol.83, pp:1-8, 2000 |
Ion milling Electron Microscopy |
| 310 |
Wax Mounting, Backlapping, and Chemo-Mechanical Polishing of 150mm GaAs Wafers |
Keith W. Torrance, Jim McAneny and Maxwell Robertson |
Lapping and polishing None |
| 311 |
Preparing Polished Cross Sections of III-V Devices for the SEM |
Heinz Nentwich and Lawrence Hobbs, GaAs Mantech,1999 |
SEM GaAs |
| 315 |
Improving High Resolution Images Using Low Energy Ion Milling |
Shane Roberts, South Bay Technology, Inc., pp:22-23 |
Low energy ion milling MEMS |
| 316 |
Surface Damage Formation during Ion Beam Thinning of Samples for TEM |
J.P. McCaffrey, M.W. Phaneuf, L.D. Madsen, Ultramicroscopy, Vol. 87, pp: 97-104, 2001 |
Ion milling Si,GaAs |
| 317 |
|
|
|
| 318 |
The Preparation of Cross-section Specimens for Transmission Electron Microscopy |
John C. Bravman and Robert Sinclair, Journal of Electron Microscopy Technique, Vol.1, pp:53-61, 1984 |
D 500i Si |
| 319 |
A Variation of Transmission Electron Microscope Sample Prep. For VLSI Analysis |
Michael C. Madden and Penny Crawford, Journal of Electron Microscopy Technique, Vol.11,pp:161-166, 1989 |
D 500i Si |
| 320 |
Application of Transverse-Section Analytical Electron Microscopy to the study of Oxidation of Metal Alloys |
Wayne E. King, N.L. Peterson, and J.F. Reddy, Argonne National Laboratory,pp:1-8 |
D 500i / XLA Fe-Cr-Y alloys Y2O3,Y2(FeCr) 17 |
| 321 |
Developments in Steel Characterization Techniques |
Masaaki Sugiyama, Nippon Steel Technical Report, No.69, pp;1-6 |
D 500i steels |
| 322 |
Advancements in Dimpling Tech. For Automatically & repeatably thinning TEM samples to near electron transparency |
Vincent L. Carlino and August J. Hidalgo, VCR Group, Inc., pp:1-9 |
D 500i Si |
| 323 |
Step by Step sample preparation of non-transparent planar TEM specimens by polishing to the thin film |
Helen Humiston and Bryan Tracy |
D 500i Al film, Si, SiO2 |
| 324 |
Step by Step sample preparation of specific area cross sections for TEM analysis of VLSI devices |
Helen Humiston |
D 500i Si |
| 325 |
Reactive Gas Plasma Specimen Processing for Use in Microanalysis and Imaging |
Nestor J. Zaluzec, Bernard J. Kestel, David Henriks |
PC2000 304 SS |
| Back to Top |